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| ON Semiconductort High Voltage Transistors MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 -55 to +150 mAdc mAdc mW mW/C Watts mW/C C 2N6515 250 250 2N6517 2N6520 350 350 Unit Vdc Vdc Vdc NPN 2N6515 2N6517 PNP 2N6520 Voltage and current are negative for PNP transistors 1 2 3 PD CASE 29-04, STYLE 1 TO-92 (TO-226AA) TJ, Tstg COLLECTOR 3 2 BASE NPN 1 EMITTER THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W COLLECTOR 3 2 BASE PNP 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. (c) Semiconductor Components Industries, LLC, 2001 V(BR)CEO 2N6515 2N6517, 2N6520 V(BR)CBO 2N6515 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6520 6.0 5.0 - - 250 350 - - 250 350 - - Vdc Vdc Vdc 1 October, 2001 - Rev. 3 Publication Order Number: 2N6515/D NPN 2N6515 2N6517 PNP 2N6520 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Continued) Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6520 - - 50 50 - - 50 50 nAdc nAdc ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 2N6515 2N6517, 2N6520 VCE(sat) - - - - VBE(sat) - - - VBE(on) - 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 20 50 30 50 30 45 20 25 15 - - - - 300 200 220 200 - - Vdc - (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6520 fT Ccb Ceb - - 80 100 40 - 200 6.0 MHz pF pF SWITCHING CHARACTERISTICS Turn-On Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) Turn-Off Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff - - 200 3.5 s s http://onsemi.com 2 NPN 2N6515 2N6517 PNP 2N6520 200 VCE = 10 V TJ = 125C hFE , DC CURRENT GAIN 100 70 50 25C -55C 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 1. DC Current Gain - NPN 2N6515 200 VCE = 10 V TJ = 125C hFE , DC CURRENT GAIN 200 VCE = -10 V 100 70 50 30 20 TJ = 125C 25C -55C hFE , DC CURRENT GAIN 100 70 50 30 20 25C -55C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 2. DC Current Gain - NPN 2N6517 Figure 3. DC Current Gain - PNP 2N6520 BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = -20 V f = 20 MHz 30 20 30 20 f T, CURRENT-GAIN 10 1.0 f T, CURRENT-GAIN 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 4. Current-Gain - Bandwidth Product - NPN 2N6515, 2N6517 Figure 5. Current-Gain - Bandwidth Product - PNP 2N6520 http://onsemi.com 3 NPN 2N6515 2N6517 PNP 2N6520 NPN 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 TJ = 25C V, VOLTAGE (VOLTS) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10 V TJ = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. "On" Voltages - NPN 2N6515, 2N6517 Figure 7. "On" Voltages - PNP 2N6520 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 IC + 10 IB 25C to 125C RVC for VCE(sat) -55C to 25C -55C to 125C RVB for VBE 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -1.0 IC + 10 IB 25C to 125C RVB for VBE -55C to 25C -0.5 -1.0 -1.5 -2.0 -2.5 1.0 RVC for VCE(sat) -55C to 125C -50 -70 -100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 8. Temperature Coefficients - NPN 2N6515, 2N6517 Figure 9. Temperature Coefficients - PNP 2N6520 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 TJ = 25C C, CAPACITANCE (pF) Ceb 100 70 50 30 20 10 7.0 5.0 3.0 2.0 Ceb TJ = 25C Ccb Ccb 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 200 1.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 VR, REVERSE VOLTAGE (VOLTS) -100 -200 Figure 10. Capacitance - NPN 2N6515, 2N6517 http://onsemi.com 4 Figure 11. Capacitance - PNP 2N6520 NPN 2N6515 2N6517 PNP 2N6520 1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C t, TIME (ns) 1.0 k 700 500 300 200 100 70 50 30 20 10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 VCE(off) = -100 V IC/IB = 5.0 TJ = 25C td @ VBE(off) = 2.0 V td @ VBE(off) = 2.0 V tr tr Figure 12. Turn-On Time - NPN 2N6515, 2N6517 Figure 13. Turn-On Time - PNP 2N6520 10 k 7.0 k 5.0 k 3.0 k t, TIME (ns) 2.0 k 1.0 k 700 500 300 200 100 1.0 tf 2.0 k ts 1.0 k 700 500 VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 -1.0 ts tf VCE(off) = -100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) -50 -70 -100 Figure 14. Turn-Off Time - NPN 2N6515, 2N6517 Figure 15. Turn-Off Time - PNP 2N6520 http://onsemi.com 5 NPN 2N6515 2N6517 PNP 2N6520 +VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 2.2 k 20 k +10.8 V 50 SAMPLING SCOPE 50 -9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 APPROXIMATELY -1.35 V (ADJUST FOR V(BE)off = 2.0 V) Figure 16. Switching Time Test Circuit r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 D = 0.5 0.2 SINGLE PULSE SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.1 0.05 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 17. Thermal Response 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 TA = 25C TC = 25C 100 ms CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6517, 2N6520 100 s 10 s 1.0 ms FIGURE A tP PP PP t1 1/f 500 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 2.0 5.0 10 20 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 6 NPN 2N6515 2N6517 PNP 2N6520 PACKAGE DIMENSIONS CASE 029-04 (TO-226AA) ISSUE AD A R P SEATING PLANE B F L K D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 7 NPN 2N6515 2N6517 PNP 2N6520 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6515/D |
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